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Analysis of Solar Cell Thin Films – A Few Examples (Ref: Ellipso Technology)

1. FTO	>> Shortcut >>
2. TCO	>> Shortcut >>
3. CdS	>> Shortcut >>
4. ZnPC	>> Shortcut >>
5. BCP	>> Shortcut >>
6. C₆₀	>> Shortcut >>
7. C₇₀	>> Shortcut >>
8. TAPC	>> Shortcut >>
9. PIN(a-Si)	>> Shortcut >>
10. Poly Si	>> Shortcut >>
11. SiN	>> Shortcut >>
12. SiNx	>> Shortcut >>
13. Al₂O₃	>> Shortcut >>
14. PTB7_PCBM	>> Shortcut >>
15. Doped ZnO	>> Shortcut >>
16. MoO₃	>> Shortcut >>
17. MoS₂	>> Shortcut >>
18. Sb₂Se₃	>> Shortcut >>

1. FTO

1-1. FTO/SiO₂ on Glass

FTO (66.2 %) + void(33.8 %)	49.27 nm
FTO (99.3 %) + void( 0.7 %)	486.03 nm
SiO₂	100 nm
Substrate	Glass

2. TCO

2-1. TCO/SiO₂ on Glass

TCO (57 %) + void(43 %)	36.10 nm
TCO	847.24 nm
TCO (81 %) + void(19 %)	239.79 nm
SiO₂	192.35 nm
Substrate	Glass

R.I. Dispersion of TCO

3. CdS

3-1. CdS on Glass

Layers (From Top)
CdS (73.66%) + void(26.34%)	40.893 nm
CdS (100%)	72.46 nm
R.I. Dispersion of	CdS
Substrate	Glass

4. ZnPC

4-1. ZnPC(350 Å) on Glass

Thickness, ZnPC	47.539 nm
R.I. Dispersion of	ZnPC
Substrate	Glass

4-2. ZnPC(1000 Å) on Glass

Thickness, ZnPC	79.953 nm
R.I. Dispersion of	ZnPC
Substrate	Glass

5. BCP

5-1. BCP on c-Si

Thickness, BCP	83.524 nm
R.I. Dispersion of	BCP
Substrate	Crystalline Silicon

6. C₆₀

6-1. C₆₀ on c-Si

Thickness, C₆₀	40.381 nm
R.I. Dispersion of	C₆₀
Substrate	Crystalline Silicon

7. C₇₀

7-1. C₇₀ on c-Si

Thickness, C₇₀	120.764 nm
R.I. Dispersion of	C₇₀
Substrate	Crystalline Silicon

- Analysis is done to the spectral range of 1.2-3.5 eV.

8. TAPC

8-1. TAPC on c-Si

Thickness, TAPC	59.058 nm
R.I. Dispersion of	TAPC
Substrate	Crystalline Silicon

9. PIN(a-Si)

9. PIN(a-Si) on Glass

a-Si (80.2 %) + void (19.8 %)	28.68 nm
a-Si (75.4 %) + void (24.6 %)	318.44 nm
a-Si (74.6 %) + void (25.4 %)	49.93 nm
Substrate	Glass

9-2. PIN(a-Si)/SnO₂ on Glass

a-Si (76.1 %) + void (23.9 %)	28.92 nm
a-Si (74.5 %) + void (25.5 %)	245.38 nm
a-Si (48.6 %) + void (51.4 %)	86.46 nm
SnO₂ (83.6 %) + void (16.4 %)	887.13 nm
Substrate	Glass

10. Poly Si

10-1. Poly Si/SiO₂ on c-Si

R.I. Dispersion of Poly

Poly : Thickness = 525.7 nm

SiO₂ : Thickness = 30.3 nm

11. SiN

11-1. SiN on c-Si

SiN Thickness	85.86 nm
R.I.(@633 nm)	2.0527
Substrate	Crystalline Silicon

11-2. SiN/SiO₂ on c-Si

Si₃N₄ Thickness	219.3 nm
SiO₂ Thickness	223.8 nm
Substrate	Crystalline Silicon

11-3. Si-rich SiN on c-Si

Si-rich SiN Film

Composition Si3N4 (85.8 %) + a-Si (14.2 %)

Thickness 51.5 nm

R.I.(@ 633 nm) 2.294,
Extinction Coeff.(@ 633 nm) 0.018

R.I Dispersion

11-4. Low Density SiN on c-Si

Si₃N₄
Density R.I.(@633 nm) Thickness	83.0 % 1.840 87.0 nm
Substrate	Crystalline Silicon

12. SiNx

12-1. SiNx on Textured c-Si, SiO₂ on Textured c-Si

Thickness SiNx : 81.24 nm

Substrate : Crystalline Silicon

R.I Dispersion of SiNx

Thickness SiO₂ : 537.89 nm

Substrate : Crystalline Silicon

12-2. SiNx on Textured Poly, SiNx on Textured c-Si

SiNx 89.88 nm	SiNx 82.22 nm	SiNx 74.95 nm
R.I. 2.250	R.I. 2.093	R.I. 2.002
Baby Blue	Deep Blue	Dark Blue

Textured poly Silicon (uncoated, left) & SiNx coated one (baby blue, center and right)

Textured poly Silicon (uncoated, lef) & SiNx coated one (deep blue, center and right)

Textured mono-crystalline Silicon (uncoated, left) & SiNx coated one (dark blue, center)

13. Al₂O₃

13-1. Low Density Al₂O₃ on c-Si

Al₂O₃ Thickness	5.58nm
R.I.(@633 nm)	1.507
Substrate	Crystalline Silicon

14. PTB7_PCBM

14-1. PTB7_PCBM on c-Si

Thickness, PTB7_PCBM	232.53 nm
R.I. Dispersion of	PTB7_PCBM
Substrate	Crystalline Silicon

15. Doped ZnO

15-1. In Doped ZnO on c-Si

Thickness, In doped ZnO	31.79 nm
R.I. Dispersion of	In doped ZnO
Substrate	Crystalline Silicon

15-2. Al Doped ZnO on c-Si

Thickness, Al doped ZnO	32.359 nm
R.I. Dispersion of	Al doped ZnO
Substrate	Crystalline Silicon

15-3. Ga Doped ZnO on c-Si

Thickness, Ga doped ZnO	25.626 nm
R.I. Dispersion of	Ga doped ZnO
Substrate	Crystalline Silicon

15-4. Al Doped ZnO on Glass – Heat Treatment

16. MoO₃

16-1. MoO₃ on c-Si

Layers (From Top)
MoO₃(80.0%) + void(20.0%)	8.548 nm
MoO₃(100%)	73.677 nm
R.I. Dispersion of	MoO₃
Substrate	Crystalline Silicon

17. MoS₂

17-1. MoS₂/SiO₂ on c-Si

Thickness : MoS₂ 66.084 nm

R.I. : Dispersion of MoS₂

Substrate : Crystalline Silicon

18. Sb₂Se₃

18-1. Sb₂Se₃ on c-Si

Thickness : Sb₂Se₃16.934 nm

R.I. : Dispersion of Sb₂Se₃

Substrate : Crystalline Silicon