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Analysis of Semiconductor Thin Films – A Few Examples (Ref: Ellipso Technology)
 

 1. SiO2

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 2. Al2O3

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 3. SiN

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 4. Poly(Boron+Carbon)

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 5. SrOx

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 6. HfOx

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 7. ATO

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 8. PMMA

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 9. Si/SiGe20

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 10. AZO

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 11. IZO

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 12. ZnO

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 13. IGZO

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 14. ZTO

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 15. TiO2

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 16. ZrO2/SiO2 Multilayer

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 17. ZnS-SiO2 on c-Si vs O2 Flow Rate

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 18. Depth Profiling of Si+ Implanted Si

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 19. Depth Profiling of Oxygen Ion Implanted Silicon

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 20. PR

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 21. GST

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 22. Ga2O3

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1. SiO2

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  1-1. SiO2 on c-Si
 
Thickness 106.234 nm
R.I. (@633 nm) 1.5302
Substrate Crystalline Silicon
  Thickness and refractive index of SiO2 film on c-Si substrate obtained by analyzing spectro-ellipsometric data.
 
    The measured ellipsometric spectra of alpha and beta (symbols) and the best fit ones(lines) are compared.
  1-2. Mapping of SiO2 Film Thickness on c-Si
 

Surface Mapping of Oxide Thickness
(SiO2 on c-Si, Thickness = 100 nm)
  Captured image of SiO2 film thickness map.
  1-3. SiO2 on SiC(SiC 표면을 산화시켜 SiO2층 생성)
 
Thickness : SiO2 1299.946 nm
R.I. : Dispersion of SiO2
Substrate : Silicon Carbide

2. Al2O3

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  2-1. Low Density Thin Al2O3 on c-Si (1/2)
 
Thickness 5.584 nm
R.I. (@633 nm) 1.507
Substrate Crystalline Silicon
  Thickness and refractive index of very thin Al2O3 film on c-Si substrate obtained by analyzing spectro-ellipsometric data.
 
    The measured ellipsometric spectra of Δ and ψ(symbols) and the best fit ones(lines) are compared
  2-2. Low Density Thin Al2O3 on c-Si (2/2)
 
Thickness 21.198 nm
R.I. (@633 nm) 1.669
Substrate Crystalline Silicon
  Thickness and refractive index of thin Al2O3 film on c-Si substrate obtained by analyzing spectro-ellipsometric data.
 
    The measured ellipsometric spectra of Δ and ψ(symbols) and the best fit ones(lines) are compared.
  2-3. Mapping of Al2O3 Film Thickness
 
Diameter(mm) 100
Measurement Count 25/25
Thickness Average(nm) 37.83
Thickness S.D.(nm) 0.085
Refractive Index Average 1.687
Refractive Index S.D. 0.001
 
  2D thickness map of Al2O3 film on c-Si.

3. SiN

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  3-1. SiN on c-Si
 
Thickness 85.863 nm
R.I. (@633 nm) 2.0527
Substrate Crystalline Silicon
  Thickness and refractive index of SiN film on c-Si substrate obtained by analyzing spectro-ellipsometric data.
 
    The measured ellipsometric spectra of alpha and beta(symbols) and the best fit ones(lines) are compared.
  3-2. SiN/SiO2 on c-Si
 
 
Si3N4 Thickness 219.3 nm
SiO2 Thickness 223.8 nm
Substrate Crystalline Silicon
  3-3. Si-rich SiN on c_Si
 
Si-rich SiN Film
Composition Si3N4 (85.8 %) + a-Si (14.2 %)
Thickness 51.5 nm
R.I.(@ 633 nm) 2.294,
Extinction Coeff.(@ 633 nm) 0.018
 
R.I Dispersion
 
  3-4. Low Density SiN on c_Si
 
 
Si3N4  
Density
R.I.(@633 nm)
Thickness
 83.0 %
1.840
87.0 nm
Substrate Crystalline Silicon
  3-5. SiNx on Glass
 
SiNx Thickness : 372.74 nm
R.I. (@633 nm) : 1.8823
Substrate : Glass

4. Poly(Boron+Carbon)

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  4-1. Poly(Boron+Carbon)/SiO2 on c-Si
 
Thickness, Poly
              SiO2		 105.99 nm
100.00 nm
R.I. Dispersion of Poly
Substrate Crystalline Silicon
  Thickness and refractive index dispersion of Poly composed of Boron and Carbon on c-Si with oxide obtained by analyzing spectro-ellipsometric data.
 
   The measured ellipsometric spectra of alpha and beta(symbols) and the best fit ones(lines) are compared.

5. SrOx

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  5-1. SrOx/SiO2 on c-Si(1/2)
 
Thickness, SrOx
              SiO2		 7.827 nm
2.0 nm
R.I. Dispersion of SrOx
Substrate Crystalline Silicon
  Thickness and refractive index of SrOx film on c-Si substrate with native oxide obtained by analyzing spectro-ellipsometric data.
 
   The measured ellipsometric spectra of alpha and beta(symbols) and the best fit ones(lines) are compared.
  5-2. SrOx/SiO2 on c-Si(2/2)
 
Thickness, SrOx
              SiO2		 2.854 nm
2.0 nm
R.I. Dispersion of SrOx
Substrate Crystalline Silicon
  Thickness and refractive index of SrOx film on c-Si substrate with native oxide obtained by analyzing spectro-ellipsometric data.
 
   The measured ellipsometric spectra of alpha and beta(symbols) and the best fit ones(lines) are compared.
  5-3. SrOx on Ru
 
Thickness, SrOx 11.675 nm
R.I. Dispersion of Ru
Substrate Ruthenium
  Thickness of SrOx film on Ru substrate and refractive index of Ru obtained by analyzing spectro-ellipsometric data.
 
   The measured ellipsometric spectra of alpha and beta(symbols) and the best fit ones(lines) are compared.

6. HfOx

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  6-1. HfOx on c-Si
 
Thickness, HfOx 14.999 nm
R.I. Dispersion of HfOx
Substrate Crystalline Silicon
  Thickness and refractive index of HfOx film on c-Si substrate obtained by analyzing spectro-ellipsometric data.
 
   The measured ellipsometric spectra of alpha and beta(symbols) and the best fit ones(lines) are compared.

7. ATO

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  7-1. ATO on c-Si
 
Thickness, ATO 30.537 nm
R.I. Dispersion of ATO
Substrate Crystalline Silicon
  Thickness and refractive index of ATO film on c-Si substrate obtained by analyzing spectro-ellipsometric data.
 
   The measured ellipsometric spectra of alpha and beta(symbols) and the best fit ones(lines) are compared.

8. PMMA

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  8-1. PMMA on c-Si
 
Thickness, PMMA 197.374 nm
R.I. Dispersion of PMMA
Substrate Crystalline Silicon
  Thickness and refractive index of PMMA film on c-Si substrate obtained by analyzing spectro-ellipsometric data.
 
   The measured ellipsometric spectra of alpha and beta(symbols) and the best fit ones(lines) are compared.

9. Si/SiGe20

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  9-1. Si/SiGe20 on c-Si
 
Thickness, Si
              SiGe20		 160.257 nm
56.159 nm
R.I. Dispersion of SiGe20
Substrate Crystalline Silicon
  Thickness and refractive index of Si/SiGe20 film on c-Si substrate obtained by analyzing spectro-ellipsometric data
 
   The measured ellipsometric spectra of alpha and beta(symbols) and the best fit ones(lines) are compared.

10. AZO

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  10-1. AZO on Glass
 
Layers (From Top) AZO (84 %) + vod (16 %) = 35.24 nm
AZO                            = 1098.36 nm
Substrate Glass
  Thickness of AZO film with its microrough surface on glass substrate obtained by analyzing spectro-ellipsometric data.
 
    The measured ellipsometric spectra of alpha and beta(symbols) and the best fit ones(lines) are compared. The graph on right shows the complex refractive index dispersion of AZO film.
  10-2. AZO/SiO2 on c-Si
 
Thickness, AZO
              SiO2		 301.9 nm
100.00 nm
R.I. Dispersion of AZO
Substrate Crystalline Silicon
  Thickness and refractive index dispersion of AZO on c-Si with oxide obtained by analyzing spectro-ellipsometric data.
 
    The measured ellipsometric spectra of alpha and beta(symbols) and the best fit ones(lines) are compared.

11. IZO

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  11-1. IZO on c-Si
 
IZO Thickness 136.2 nm
Substrate Crystalline Silicon
R.I. Dispersion of IZO
  Thickness and refractive index dispersion of IZO on c-Si obtained by analyzing spectro-ellipsometric data.
 
     The measured ellipsometric spectra of alpha and beta(symbols) and the best fit ones(lines) are compared

12. ZnO

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  12-1. ZnO on c-Si
 
Thickness, ZnO
              SiO2		 45.6 nm
105.69 nm
R.I. Dispersion of ZnO
Substrate Crystalline Silicon
  Thickness and refractive index dispersion of ZnO on c-Si with oxide obtained by analyzing spectro-ellipsometric data.
 
    The measured ellipsometric spectra of alpha and beta(symbols) and the best fit ones(lines) are compared

13. IGZO

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  13-1. IGZO on Glass
 
Thickness, IGZO(80%)+void(20%)
              SiO2		 8.648 nm
42.143 nm
R.I. Dispersion of IGZO
Substrate Glass
  Thickness and refractive index dispersion of IGZO on glass obtained by analyzing spectro-ellipsometric data.
 
    The measured ellipsometric spectra of alpha and beta(symbols) and the best fit ones(lines) are compared
  13-2. IGZO on c_Si
 
Thickness, IGZO
              SiO2		 62.685 nm
1.717 nm
R.I. Dispersion of IGZO
Substrate Crystalline Silicon
  Thickness and refractive index dispersion of IGZO on c-Si with native oxide obtained by analyzing spectro-ellipsometric data.
 
    The measured ellipsometric spectra of alpha and beta(symbols) and the best fit ones(lines) are compared
  13-3. IGZO/SiO2 on c-Si
 
Thickness, IGZO
              SiO2		 9.716 nm
206.003 nm
R.I. Dispersion of IGZO
Substrate Crystalline Silicon
  Thickness and refractive index dispersion of IGZO on c-Si with thick oxide obtained by analyzing spectro-ellipsometric data.
 
    The measured ellipsometric spectra of alpha and beta(symbols) and the best fit ones(lines) are compared

14. ZTO

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  14-1. ZTO/SiO2 on c-Si
 
Thickness, ZTO
              SiO2		 22.631 nm
304.844 nm
R.I. Dispersion of ZTO
Substrate Crystalline Silicon
  Thickness and refractive index dispersion of ZTO on c-Si with thick oxide obtained by analyzing spectro-ellipsometric data.
 
    The measured ellipsometric spectra of alpha and beta(symbols) and the best fit ones(lines) are compared

15. TiO2

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  15-1. TiO2 on Gkass(1/2)
 
Layers (From Top) TiO2 (27 %) + vod (73 %) = 11.42 nm
TiO2                            = 30.58 nm
Substrate Glass
  Thickness of TiO2 film with its microrough surface on glass substrate obtained by analyzing spectro-ellipsometric data.
 
    The measured ellipsometric spectra of alpha and beta(symbols) and the best fit ones(lines) are compared. The graph on right shows the complex refractive index dispersion of TiO2 film
  15-2. TiO2 on Gkass(2/2)
 
TiO2 Thickness 38.1 nm
Substrate Glass
 
  The measured ellipsometric spectra of alpha and beta(symbols) and the best fit ones(lines).
  15-3. Ag Doped TiO2 on Glass
 
Thickness : 157.65 nm
Substrate : Glass
R.I. Dispersion

  15-4. Co Doped TiO2 on Glass
 
Thickness : 165.65 nm
Substrate : Glass
R.I. Dispersion

16. ZrO2/SiO2 Multilayer

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  16-1. ZrO2/SiO2 Multilayer on c_Si
 
Layers from Top  
SiO2 92.6 nm
ZrO2 (96.0 %) + void (4.0 %) 63.8 nm
SiO2 12.7 nm
ZrO2 (92.6 %) + void (7.4 %) 28.6 nm
SiO2 114.9 nm
SiO2 (93.8 %) + c-Si (6.2 %) 6.2 nm
Substrate Crystalline Silicon
  Thickness and volume density of alternatively deposited SiO2 and ZrO2 multilayers on c-Si substrate are determined by analyzing spectro-ellipsometric data.
 
    The measured ellipsometric spectra of Δ and ψ(dashed lines) and the best fit ones(solid lines) are compared.

17. ZnS-SiO2 on c-Si vs O2 Flow Rate

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    Dependence of optical property of sputter grown ZnS-SiO2 film on Oxygen flow rate.

18. Depth Profiling of Si+ Implanted Si

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  Comparison of X-TEM and SE for depth profiling of Si+ ion implanted silicon shows that results are in
 excellent agreement each other.
 
  Comparison between the experimentally measured (Δ, ψ) data and the calculated data using the model
  shown above. (Vedam et al., App. Phys. Lett. 47(4) 339, 1985)

19. Depth Profiling of Oxygen Ion Implanted Silicon

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  19-1. Depth Profiling of Oxygen Ion Implanted Silicon-on-Insulator(1/2)
 
  Spectro-ellipsometric spectrum of tan(Psi) and the X-TEM image of an Oxygen ion implanted silicon. The measured spectro-ellipsometric constants are shown as dots and the best fit spectrum as a line.
 
Layers (From Top) SiO2 (71 %) + Si (29 %)       1.55 nm
c-Si (96 %) + SiO2 (4 %)     1406 nm
c-Si (47 %) + SiO2 (53 %)      5.0 nm
SiO2                              285.2 nm
c-Si (64 %) + SiO2 (36 %)     23.5 nm
Substrate Crystalline Silicon
  Depth profiling of the above Oxygen implanted silicon sample is successfully achieved as a result of the modeling analysis SE data. (Narayan et al., App. Phys. Lett. 51(5) 343, 1987)
  19-2. Depth Profiling of Oxygen Ion Implanted Silicon-on-Insulator(2/2)
        
  Spectro-ellipsometric spectrum of cos(Delta) and the X-TEM image of an Oxygen ion implanted silicon. The measured spectro-ellipsometric constants are shown as dots and the best fit spectrum as a line.
 
Layers (From Top) SiO2                                  2.35 nm
c-Si (95.3 %) + SiO2 (4.7 %)    28.0 nm
SiO2                                  401.2nm
Substrate Crystalline Silicon
  Depth profiling of the above Oxygen implanted silicon sample is successfully achieved as a result of the modeling analysis SE data. (Narayan et al., App. Phys. Lett. 51(5) 343, 1987)

20. PR

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  20-1. PR on c_Si
 
Thickness : PR 1423.475 nm
R.I. : Dispersion of PR
Substrate : Crystalline Silicon

21. GST

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  21-1. GST/SiO2 on c_Si(heating)
 
Thickness : GST 12.322 nm
R.I. : Dispersion of GST
Substrate : Crystalline Silicon

  21-2. GST/SiO2(650nm) on c_Si
 
Thickness : GST 13.087 nm
R.I. : Dispersion of GST
Substrate : Crystalline Silicon

22. Ga2O3

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  22-1. Ga2O3 on c_Si
 
Thickness : Ga2O3 13.184 nm
R.I. : Dispersion of Ga2O3
Substrate : Crystalline Silicon