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Analysis of Solar Cell Thin Films – A Few Examples (Ref: Ellipso Technology) |
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| FTO (66.2 %) + void(33.8 %) |
49.27 nm |
| FTO (99.3 %) + void( 0.7 %) |
486.03 nm |
| SiO2 |
100 nm |
| Substrate |
Glass |
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| TCO (57 %) + void(43 %) |
36.10 nm |
| TCO |
847.24 nm |
| TCO (81 %) + void(19 %) |
239.79 nm |
| SiO2 |
192.35 nm |
| Substrate |
Glass |
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| R.I. Dispersion of TCO |
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Layers (From Top) |
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| CdS (73.66%) + void(26.34%) |
40.893 nm |
| CdS (100%) |
72.46 nm |
| R.I. Dispersion of |
CdS |
| Substrate |
Glass |
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4-1. ZnPC(350 Å) on Glass |
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| Thickness, ZnPC |
47.539 nm |
| R.I. Dispersion of |
ZnPC |
| Substrate |
Glass |
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4-2. ZnPC(1000 Å) on Glass |
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| Thickness, ZnPC |
79.953 nm |
| R.I. Dispersion of |
ZnPC |
| Substrate |
Glass |
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| Thickness, BCP |
83.524 nm |
| R.I. Dispersion of |
BCP |
| Substrate |
Crystalline Silicon |
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| Thickness, C60 |
40.381 nm |
| R.I. Dispersion of |
C60 |
| Substrate |
Crystalline Silicon |
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| Thickness, C70 |
120.764 nm |
| R.I. Dispersion of |
C70 |
| Substrate |
Crystalline Silicon |
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| - Analysis is done to the spectral range of 1.2-3.5 eV. |
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| Thickness, TAPC |
59.058 nm |
| R.I. Dispersion of |
TAPC |
| Substrate |
Crystalline Silicon |
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 on Glass.jpg) |
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 on Glass.jpg) |
| a-Si (80.2 %) + void (19.8 %) |
28.68 nm |
| a-Si (75.4 %) + void (24.6 %) |
318.44 nm |
| a-Si (74.6 %) + void (25.4 %) |
49.93 nm |
| Substrate |
Glass |
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9-2. PIN(a-Si)/SnO2 on Glass |
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_SnO2 on Glass.jpg) |
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| a-Si (76.1 %) + void (23.9 %) |
28.92 nm |
| a-Si (74.5 %) + void (25.5 %) |
245.38 nm |
| a-Si (48.6 %) + void (51.4 %) |
86.46 nm |
| SnO2 (83.6 %) + void (16.4 %) |
887.13 nm |
| Substrate |
Glass |
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10-1. Poly Si/SiO2 on c-Si |
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| R.I. Dispersion of Poly |
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| Poly : Thickness = 525.7 nm |
| SiO2 : Thickness = 30.3 nm |
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| SiN Thickness |
85.86 nm |
| R.I.(@633 nm) |
2.0527 |
| Substrate |
Crystalline Silicon |
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| Si3N4 Thickness |
219.3 nm |
| SiO2 Thickness |
223.8 nm |
| Substrate |
Crystalline Silicon |
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11-3. Si-rich SiN on c-Si |
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| Si-rich SiN Film |
| Composition Si3N4 (85.8 %) + a-Si (14.2 %) |
| Thickness 51.5 nm |
R.I.(@ 633 nm) 2.294,
Extinction Coeff.(@ 633 nm) 0.018 |
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| R.I Dispersion |
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11-4. Low Density SiN on c-Si |
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| Si3N4 |
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Density
R.I.(@633 nm)
Thickness
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83.0 %
1.840
87.0 nm |
| Substrate |
Crystalline Silicon |
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12-1. SiNx on Textured c-Si, SiO2 on Textured c-Si |
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| Thickness SiNx : 81.24 nm |
| Substrate : Crystalline Silicon |
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| R.I Dispersion of SiNx |
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| Thickness SiO2 : 537.89 nm |
| Substrate : Crystalline Silicon |
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12-2. SiNx on Textured Poly, SiNx on Textured c-Si |
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| SiNx 89.88 nm |
SiNx 82.22 nm
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SiNx 74.95 nm |
| R.I. 2.250 |
R.I. 2.093 |
R.I. 2.002 |
| Baby Blue |
Deep Blue |
Dark Blue |
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Textured poly Silicon (uncoated, left) & SiNx coated one (baby blue, center and right)
Textured poly Silicon (uncoated, lef) & SiNx coated one (deep blue, center and right)
Textured mono-crystalline Silicon (uncoated, left) & SiNx coated one (dark blue, center) |
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13-1. Low Density Al2O3 on c-Si |
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| Al2O3 Thickness |
5.58nm |
| R.I.(@633 nm) |
1.507 |
| Substrate |
Crystalline Silicon |
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| Thickness, PTB7_PCBM |
232.53 nm |
| R.I. Dispersion of |
PTB7_PCBM |
| Substrate |
Crystalline Silicon |
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15-1. In Doped ZnO on c-Si |
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| Thickness, In doped ZnO |
31.79 nm |
| R.I. Dispersion of |
In doped ZnO |
| Substrate |
Crystalline Silicon |
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15-2. Al Doped ZnO on c-Si |
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| Thickness, Al doped ZnO |
32.359 nm |
| R.I. Dispersion of |
Al doped ZnO |
| Substrate |
Crystalline Silicon |
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15-3. Ga Doped ZnO on c-Si |
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| Thickness, Ga doped ZnO |
25.626 nm |
| R.I. Dispersion of |
Ga doped ZnO |
| Substrate |
Crystalline Silicon |
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15-4. Al Doped ZnO on Glass – Heat Treatment |
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Layers (From Top) |
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| MoO3(80.0%) + void(20.0%) |
8.548 nm |
| MoO3(100%) |
73.677 nm |
| R.I. Dispersion of |
MoO3 |
| Substrate |
Crystalline Silicon |
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| Thickness : MoS2 66.084 nm |
| R.I. : Dispersion of MoS2 |
| Substrate : Crystalline Silicon |
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| Thickness : Sb2Se3 16.934 nm |
| R.I. : Dispersion of Sb2Se3 |
| Substrate : Crystalline Silicon |
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